diff options
| author | Jernej Skrabec <[email protected]> | 2023-04-10 10:21:13 +0200 |
|---|---|---|
| committer | Andre Przywara <[email protected]> | 2023-04-12 00:17:21 +0100 |
| commit | f221411caa901cc02ac4aea6a39fa562e87aaa59 (patch) | |
| tree | d9cde6d0e8eef8636236ad37b760e15340c560ec /arch | |
| parent | f35ec2105ed8e3c9279e71adc390b83a2c5c1850 (diff) | |
sunxi: Convert H616 DRAM options to single setting
Vendor DRAM settings use TPR10 parameter to enable various features.
There are many mores features that just those that are currently
mentioned. Since new will be added later and most are not known, let's
reuse value from vendor DRAM driver as-is. This will also help adding
support for new boards.
Signed-off-by: Jernej Skrabec <[email protected]>
Reviewed-by: Andre Przywara <[email protected]>
Signed-off-by: Andre Przywara <[email protected]>
Diffstat (limited to 'arch')
| -rw-r--r-- | arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h | 9 | ||||
| -rw-r--r-- | arch/arm/mach-sunxi/Kconfig | 38 | ||||
| -rw-r--r-- | arch/arm/mach-sunxi/dram_sun50i_h616.c | 197 |
3 files changed, 115 insertions, 129 deletions
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h index c9e1f84bfcd..dbdc6b694ec 100644 --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h @@ -137,6 +137,14 @@ check_member(sunxi_mctl_ctl_reg, unk_0x4240, 0x4240); #define MSTR_ACTIVE_RANKS(x) (((x == 2) ? 3 : 1) << 24) #define MSTR_BURST_LENGTH(x) (((x) >> 1) << 16) +#define TPR10_CA_BIT_DELAY BIT(16) +#define TPR10_DX_BIT_DELAY0 BIT(17) +#define TPR10_DX_BIT_DELAY1 BIT(18) +#define TPR10_WRITE_LEVELING BIT(20) +#define TPR10_READ_CALIBRATION BIT(21) +#define TPR10_READ_TRAINING BIT(22) +#define TPR10_WRITE_TRAINING BIT(23) + struct dram_para { u32 clk; enum sunxi_dram_type type; @@ -147,6 +155,7 @@ struct dram_para { u32 dx_odt; u32 dx_dri; u32 ca_dri; + u32 tpr10; }; diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig index 14fb9a95905..1b47a49f938 100644 --- a/arch/arm/mach-sunxi/Kconfig +++ b/arch/arm/mach-sunxi/Kconfig @@ -52,38 +52,6 @@ config DRAM_SUN50I_H616 like H616. if DRAM_SUN50I_H616 -config DRAM_SUN50I_H616_WRITE_LEVELING - bool "H616 DRAM write leveling" - ---help--- - Select this when DRAM on your H616 board needs write leveling. - -config DRAM_SUN50I_H616_READ_CALIBRATION - bool "H616 DRAM read calibration" - ---help--- - Select this when DRAM on your H616 board needs read calibration. - -config DRAM_SUN50I_H616_READ_TRAINING - bool "H616 DRAM read training" - ---help--- - Select this when DRAM on your H616 board needs read training. - -config DRAM_SUN50I_H616_WRITE_TRAINING - bool "H616 DRAM write training" - ---help--- - Select this when DRAM on your H616 board needs write training. - -config DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION - bool "H616 DRAM bit delay compensation" - ---help--- - Select this when DRAM on your H616 board needs bit delay - compensation. - -config DRAM_SUN50I_H616_UNKNOWN_FEATURE - bool "H616 DRAM unknown feature" - ---help--- - Select this when DRAM on your H616 board needs this unknown - feature. - config DRAM_SUN50I_H616_DX_ODT hex "H616 DRAM DX ODT parameter" help @@ -98,6 +66,12 @@ config DRAM_SUN50I_H616_CA_DRI hex "H616 DRAM CA DRI parameter" help CA DRI value from vendor DRAM settings. + +config DRAM_SUN50I_H616_TPR10 + hex "H616 DRAM TPR10 parameter" + help + TPR10 value from vendor DRAM settings. It tells which features + should be configured, like write leveling, read calibration, etc. endif config SUN6I_PRCM diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c index 06a07dfbf9c..630c7c3be88 100644 --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c @@ -577,109 +577,112 @@ static bool mctl_phy_bit_delay_compensation(struct dram_para *para) u32 *ptr; int i; - clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1); - setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8); - clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10); + if (para->tpr10 & TPR10_DX_BIT_DELAY1) { + clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1); + setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8); + clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484); - for (i = 0; i < 9; i++) { - writel_relaxed(0x16, ptr); - writel_relaxed(0x16, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484); + for (i = 0; i < 9; i++) { + writel_relaxed(0x16, ptr); + writel_relaxed(0x16, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8); - for (i = 0; i < 9; i++) { - writel_relaxed(0x1a, ptr); - writel_relaxed(0x1a, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8); + for (i = 0; i < 9; i++) { + writel_relaxed(0x1a, ptr); + writel_relaxed(0x1a, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604); - for (i = 0; i < 9; i++) { - writel_relaxed(0x1a, ptr); - writel_relaxed(0x1a, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604); + for (i = 0; i < 9; i++) { + writel_relaxed(0x1a, ptr); + writel_relaxed(0x1a, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658); - for (i = 0; i < 9; i++) { - writel_relaxed(0x1a, ptr); - writel_relaxed(0x1a, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0); - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658); + for (i = 0; i < 9; i++) { + writel_relaxed(0x1a, ptr); + writel_relaxed(0x1a, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0); + writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760); - dmb(); + dmb(); - setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1); + setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1); + } - /* second part */ - clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); - clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4); + if (para->tpr10 & TPR10_DX_BIT_DELAY0) { + clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); + clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480); - for (i = 0; i < 9; i++) { - writel_relaxed(0x10, ptr); - writel_relaxed(0x10, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528); - writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8); - writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8); - writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480); + for (i = 0; i < 9; i++) { + writel_relaxed(0x10, ptr); + writel_relaxed(0x10, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528); + writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8); + writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8); + writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4); - for (i = 0; i < 9; i++) { - writel_relaxed(0x12, ptr); - writel_relaxed(0x12, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4); + for (i = 0; i < 9; i++) { + writel_relaxed(0x12, ptr); + writel_relaxed(0x12, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600); - for (i = 0; i < 9; i++) { - writel_relaxed(0x12, ptr); - writel_relaxed(0x12, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648); - writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600); + for (i = 0; i < 9; i++) { + writel_relaxed(0x12, ptr); + writel_relaxed(0x12, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648); + writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708); - ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654); - for (i = 0; i < 9; i++) { - writel_relaxed(0x14, ptr); - writel_relaxed(0x14, ptr + 0x30); - ptr += 2; - } - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c); - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c); + ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654); + for (i = 0; i < 9; i++) { + writel_relaxed(0x14, ptr); + writel_relaxed(0x14, ptr + 0x30); + ptr += 2; + } + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c); + writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c); - dmb(); + dmb(); - setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); + setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80); + } return true; } @@ -718,7 +721,7 @@ static bool mctl_phy_init(struct dram_para *para) for (i = 0; i < ARRAY_SIZE(phy_init); i++) writel(phy_init[i], &ptr[i]); - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_UNKNOWN_FEATURE)) { + if (para->tpr10 & TPR10_CA_BIT_DELAY) { ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780); for (i = 0; i < 32; i++) writel(0x16, &ptr[i]); @@ -800,7 +803,7 @@ static bool mctl_phy_init(struct dram_para *para) clrbits_le32(&mctl_ctl->rfshctl3, 1); writel(1, &mctl_ctl->swctl); - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING)) { + if (para->tpr10 & TPR10_WRITE_LEVELING) { for (i = 0; i < 5; i++) if (mctl_phy_write_leveling(para)) break; @@ -810,7 +813,7 @@ static bool mctl_phy_init(struct dram_para *para) } } - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION)) { + if (para->tpr10 & TPR10_READ_CALIBRATION) { for (i = 0; i < 5; i++) if (mctl_phy_read_calibration(para)) break; @@ -820,7 +823,7 @@ static bool mctl_phy_init(struct dram_para *para) } } - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_TRAINING)) { + if (para->tpr10 & TPR10_READ_TRAINING) { for (i = 0; i < 5; i++) if (mctl_phy_read_training(para)) break; @@ -830,7 +833,7 @@ static bool mctl_phy_init(struct dram_para *para) } } - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING)) { + if (para->tpr10 & TPR10_WRITE_TRAINING) { for (i = 0; i < 5; i++) if (mctl_phy_write_training(para)) break; @@ -840,8 +843,7 @@ static bool mctl_phy_init(struct dram_para *para) } } - if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION)) - mctl_phy_bit_delay_compensation(para); + mctl_phy_bit_delay_compensation(para); clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 4); @@ -1022,6 +1024,7 @@ unsigned long sunxi_dram_init(void) .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT, .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI, .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI, + .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10, }; unsigned long size; 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