diff options
| -rw-r--r-- | tools/env/fw_env.c | 47 |
1 files changed, 18 insertions, 29 deletions
diff --git a/tools/env/fw_env.c b/tools/env/fw_env.c index 425faf380fb..49a068d91cc 100644 --- a/tools/env/fw_env.c +++ b/tools/env/fw_env.c @@ -50,6 +50,7 @@ struct env_opts default_opts = { }; #define DIV_ROUND_UP(n, d) (((n) + (d) - 1) / (d)) +#define ROUND_UP(x, y) (DIV_ROUND_UP(x, y) * (y)) #define min(x, y) ({ \ typeof(x) _min1 = (x); \ @@ -983,9 +984,6 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) { void *data; struct erase_info_user erase; - size_t blocklen; /* length of NAND block / NOR erase sector */ - size_t erase_len; /* whole area that can be erased - may include - bad blocks */ size_t erasesize; /* erase / write length - one block on NAND, whole area on NOR */ size_t processed = 0; /* progress counter */ @@ -1004,20 +1002,21 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) * For mtd devices only offset and size of the environment do matter */ if (DEVTYPE(dev) == MTD_ABSENT) { - blocklen = count; - erase_len = blocklen; - blockstart = DEVOFFSET(dev); + erasesize = count; block_seek = 0; - write_total = blocklen; + write_total = count; } else { - blocklen = DEVESIZE(dev); - erase_offset = DEVOFFSET(dev); - /* Maximum area we may use */ - erase_len = environment_end(dev) - erase_offset; - - blockstart = erase_offset; + if (DEVTYPE(dev) == MTD_NANDFLASH) { + /* + * NAND: calculate which blocks we are writing. We have + * to write one block at a time to skip bad blocks. + */ + erasesize = DEVESIZE(dev); + } else { + erasesize = environment_end(dev) - erase_offset; + } /* Offset inside a block */ block_seek = DEVOFFSET(dev) - erase_offset; @@ -1027,8 +1026,7 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) * to the start of the data, then count bytes of data, and * to the end of the block */ - write_total = ((block_seek + count + blocklen - 1) / - blocklen) * blocklen; + write_total = ROUND_UP(block_seek + count, DEVESIZE(dev)); } /* @@ -1037,11 +1035,11 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) * block back again. */ if (write_total > count) { - data = malloc(erase_len); + data = malloc(write_total); if (!data) { fprintf(stderr, "Cannot malloc %zu bytes: %s\n", - erase_len, strerror(errno)); + write_total, strerror(errno)); return -1; } @@ -1067,24 +1065,15 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) } else { /* * We get here, iff offset is block-aligned and count is a - * multiple of blocklen - see write_total calculation above + * multiple of erase size - see write_total calculation above */ data = buf; } - if (DEVTYPE(dev) == MTD_NANDFLASH) { - /* - * NAND: calculate which blocks we are writing. We have - * to write one block at a time to skip bad blocks. - */ - erasesize = blocklen; - } else { - erasesize = erase_len; - } - erase.length = erasesize; /* This only runs once on NOR flash and SPI-dataflash */ + blockstart = DEVOFFSET(dev); while (processed < write_total) { rc = flash_bad_block(fd, DEVTYPE(dev), blockstart); if (rc < 0) /* block test failed */ @@ -1096,7 +1085,7 @@ static int flash_write_buf(int dev, int fd, void *buf, size_t count) } if (rc) { /* block is bad */ - blockstart += blocklen; + blockstart += erasesize; continue; } |